A physics-based predictive model for pulse design to realize high-performance memristive neural networksHaoyue Deng, Zhen Fan, Shuai Dong, Zhiwei Chen, Wenjie Li, Yihong Chen, Kun Liu, Ruiqiang Tao, Guo Tian, Deyang Chen, Minghui Qin, Min Zeng, Xubing Lu, Guofu Zhou, Xingsen Gao, Jun-Ming Liu
Memristive neural networks have extensively been investigated for their capability in handling various artificial intelligence tasks. The training performance of memristive neural networks depends on the pulse scheme applied to the constituent memristors. However, the design of the pulse scheme in most previous studies was approached in an empirical manner or through a trial-and-error method. Here, we choose ferroelectric tunnel junction (FTJ) as a model memristor and demonstrate a physics-based predictive model for the pulse design to achieve high training performance. This predictive model comprises a physical model for FTJ that can adequately describe the polarization switching and memristive switching behaviors of the FTJ and an FTJ-based neural network that uses the long-term potentiation (LTP)/long-term depression (LTD) characteristics of the FTJ for the weight update. Simulation results based on the predictive model demonstrate that the LTP/LTD characteristics with a good trade-off between ON/OFF ratio, nonlinearity, and asymmetry can lead to high training accuracies for the FTJ-based neural network. Moreover, it is revealed that an amplitude-increasing pulse scheme may be the most favorable pulse scheme as it offers the widest ranges of pulse amplitudes and widths for achieving high accuracies. This study may provide useful guidance for the pulse design in the experimental development of high-performance memristive neural networks.