DOI: 10.1098/rsta.2023.0170 ISSN: 1364-503X

SiV 0 centres in diamond: effect of isotopic substitution in carbon and silicon

Kirill N. Boldyrev, Eduard S. Sektarov, Andrey P. Bolshakov, Victor G. Ralchenko, Vadim S. Sedov
  • General Physics and Astronomy
  • General Engineering
  • General Mathematics

The neutrally charged silicon-vacancy defect (SiV 0 ) is a colour centre in diamond with spin S = 1, a zero-phonon line (ZPL) at 946 nm and long spin coherence, which makes it a promising candidate for quantum network applications. For the proper performance of such colour centres, all of them must have identical optical characteristics. However, in practice, there are factors that influence each individual centre. One of these factors is non-uniform isotope composition for both carbon atoms in diamond lattice and silicon atoms of dopant. In this work, we studied the isotopic shifts of SiV 0 centres for CVD-grown epitaxial layers of isotopically enriched 12 C and 13 C diamonds, as well as for diamond with natural isotope composition but doped only with one isotope of Si ( 28 Si, 29 Si and 30 Si). The detected shift was 1.60 meV for 12 C/ 13 C couple and 0.33 meV for 28 Si/ 29 Si and 29 Si/ 30 Si couples, which are close to the previously obtained values of the isotopic shift for the negatively charged silicon vacancy (SiV ), which indicates a similar model of interaction with the environment for these two charge states of the SiV colour centres.

This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'.

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