This paper presents experimental I-V characteristics of a QDC-QDG FET that exhibited 5-states and has the potential to introduce additional states (e.g. 8) by utilizing Ge QDSL mini-energy sub-bands. Mini-energy bands are formed in an asymmetric Si quantum dot channel (QDC) comprising of two silicon oxide cladded Si quantum dots (QDs), where the upper layer has a smaller core diameter and thicker upper oxide cladding serving as tunnel oxide. Quantum simulations are presented to show more states when additional two germanium oxide cladded Ge dots are added on top of Si QD layers in the gate region. This paper also proposes Gate all around (GAA) FETs, when integrated with nonvolatile random access memories (NVRAMs) that have the potential for wafer scale integration, similar to vertical NANDs. Novel Si and Ge Quantum-dot-based device configurations discussed in this paper open the pathway forward to implement hardware platform for emerging applications using low power consumption and smaller footprint.

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