Gate‐Last MoS₂ Transistors for Active‐Matrix Display Driving Circuits

Abstract

Advancements in display technology have primarily focused on discovering new materials to develop thin‐film transistors (TFTs) that complement mainstream technologies. The emerging 2D semiconductors are one of the most promising candidates due to their ultra‐thin thickness, exceptional electrical qualities, and large‐scale availability. However, these atomically thin materials are delicate and typically prepared through standard gate‐first fabrication processes, necessitating their transfer onto specific substrates. In this study, a demonstration of an in situ gate‐last process for 2D semiconductor‐based TFTs technology is presented. This approach bypasses the yield‐limiting transfer process, enabling large‐scale display applications. The as‐fabricated MoS₂ TFTs retains their intrinsic properties with a current density reaching ≈≈10 µA µm⁻¹. Additionally, it is successfully showcased that the two transistor‐one capacitor active‐matrix display driving circuits with a high pixel yield. The patterned matrix exhibits no crosstalk and can be driven by either the pulse amplitude modulation or pulse width modulation scheme, offering flexible applications.