DOI: 10.1002/pssa.202300199 ISSN: 1862-6300

Effect of SiO2 Surface Passivation on Performance of GaN Polarization Superjunction (PSJ) HFETs

Yangming Du, Ekkanath Madathil Sankara Narayanan, Hiroji Kawai, Shuichi Yagi, Hironobu Narui
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
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This paper reports on the effects of the SiO2 surface passivation layer on normally‐on 1.2kV GaN polarization Super‐Junction (PSJ) Heterojunction Field Effect Transistors (HFETs) by comparing the electrical performances of PSJ HFETs with and without SiO2 surface passivation. A slight recovery of the 2DEG sheet density is observed in the slight negative shift of Vth after SiO2 surface passivation. Passivation also increases the breakdown voltage. This improvement may result from removing positive surface charges in defects along the P‐GaN gate sidewall and top u‐GaN layer after the specifically designed SiO2 surface passivation. Furthermore, the SiO2 surface passivation can also effectively suppress the surface gate leakage currents in the PSJ HFETs by eliminating the conductive channel created by the positive surface charges in defects.

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