DOI: 10.1039/d3nj02337k ISSN: 1144-0546
Coexistence mechanisms of negative differential resistance and resistive switching effects in a WOx-based memristor
Yucheng Wang, Xiaochuan Chen, Yueyang Shang, Hexin Wang, Dingyun Guo, Jiawei Zheng, Zeyang An, Ruixi Huang, Shaoxi Wang- Materials Chemistry
- General Chemistry
- Catalysis
Metal oxide memristors are highly desirable for bionic synaptic applications.