Abstract This work deals with the production of porous silicon samples by electrochemical etching method and their analysis using FTIR and Raman spectroscopy. Porous silicon samples were prepared under various conditions, such as etching time and current density. A p-type silicon substrate was used to prepare the porous silicon structures. FTIR spectroscopy was performed to determine the chemical bonds formed during the etching process. The structural properties of the prepared samples were investigated by Raman spectroscopy.

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