A Pseudo‐Junction Barrier Schottky diode in p‐GaN/AlGaN/GaN HEMT epitaxial layers
Krishna Sai Sriramadasu, Yue-ming Hsin- Materials Chemistry
- Electrical and Electronic Engineering
- Surfaces, Coatings and Films
- Surfaces and Interfaces
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
This work investigates a pseudo junction barrier Schottky (pseudo‐JBS) diode that is created by placing an AlGaN/GaN Schottky diode in parallel with a p‐GaN junction on the same epitaxial p‐GaN gate AlGaN/GaN HEMT wafer. This pseudo‐JBS diode employs the 2DEG to increase the operation current, thus reducing the on‐resistance with high blocking voltage. The fabricated pseudo‐JBS diode with anode to cathode lengths (LAC) of 10 µm shows a turn‐on voltage of 1.05 V, a minimum specific ON‐resistance (RON,MIN) of 2.53 mΩ‐cm2, and blocking voltage of 1112 V yielding an excellent Baliga’s figure of merit of 488.7 MW/cm2 on the same epitaxial p‐GaN/AlGaN/GaN HEMT wafer. This study provides a promising substitute for Schottky barrier diodes without requiring extra p‐GaN layer design.
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