2D Molecular Ferroelectric with Large Out‐of‐plane Polarization for In‐Memory ComputingJie Yao, Zi‐Jie Feng, Zhenliang Hu, Yu‐An Xiong, Qiang Pan, Guo‐Wei Du, Hao‐Ran Ji, Tai‐Ting Sha, Junpeng Lu, Yu‐Meng You
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
2D ferroelectric materials with out‐of‐plane polarization are crucial for future nanoscale logic devices due to the increasing demand for energy‐efficient architectures in artificial intelligence. However, only a few 2D out‐of‐plane ferroelectrics are confirmed experimentally. As an important branch of ferroelectrics, organic–inorganic hybrid perovskite ferroelectrics show flexible structures, making them eligible for constructing multifunctional materials. Here, a 2D organic–inorganic hybrid perovskite ferroelectric (6‐BHA)2CdBr4 (6‐BHA is 6‐bromohexylamine) is designed, which crystallizes in polar point group Cc. It experiences the reversal phase transition at 317.8 K and possesses multiaxial ferroelectric properties. More interestingly, it exhibits a large spontaneous polarization value of 3.26 µC cm−2 in out‐of‐plane direction of the film compared with typical 2D ferroelectrics. Moreover, an inverter based on (6‐BHA)2CdBr4 is fabricated, which serves as a proof of concept for the feasibility for logic‐in‐memory devices. This work not only enriches the family of molecular ferroelectrics but also shows the potential to create the next generation of in‐memory computing devices, nanoelectronics devices, and ultra‐high‐density memories.