Ultra-high vacuum cluster system integrating two-dimensional heterostructures growth, characterization, device fabrication and electrical transport measurement

Two-dimensional (2D) heterostructures offer immense opportunities for exploring novel physical properties and realizing higher-performance functional devices. However, despite significant advances in synthesizing macro-sized and high-quality heterostructures under ultrahigh vacuum (UHV), subsequent device fabrication and measurement are often performed ex situ due to fundamental incompatibility, making it challenging to obtain the intrinsic properties of 2D heterostructures. Here, we constructed a fully integrated UHV cluster system that enables material growth, characterization, device fabrication, and electrical measurements at pressures below 5 × 10−10 mbar, ensuring that the pristine surface and interface of the heterostructures are maintained throughout. The molecular beam epitaxy equipment is engineered as interchangeable mobile modules, allowing flexible reconfiguration within the cluster and rapid deployment to external experimental stations. The device fabrication equipment enables micron-precision multi-layer device fabrication, utilizing five-axis dynamic mask alignment under real-time optical monitoring to form reliable ohmic contacts. The measurement platform is constructed for temperature-dependent electrical transport measurement and features interchangeable modular probes, enabling convenient probe replacement to accommodate diverse experimental requirements. We demonstrate the performance of the cluster system through the deposition and comprehensive characterization of monolayer NbTe2/bilayer graphene heterostructures, the fabrication of an α-In2Se3 device, and the superconducting transition measurement of a Nb thin film.