Two-Dimensional Indium Selenide for Next-Generation Electronics

Two-dimensional indium selenide (InSe) is a promising material for next-generation electronics, characterized by a small electron effective mass and ultrahigh room-temperature mobility. This review systematically examines the fundamental physics and emerging quantum phenomena intrinsic to InSe. It also addresses the recent discovery of sliding ferroelectricity, which breaks macroscopic spatial inversion symmetry and yields robust polarization states without conventional displacive ionic dynamics. Technological progress from mechanical exfoliation to scalable bottom-up metal‒organic chemical vapor deposition is evaluated. The review also covers advanced architecture enabled by InSe, including sub-3 nm-node logic transistors and nonvolatile ferroelectric synaptic devices. Finally, key challenges involving stoichiometric control, back-end-of-line-compatible integration, and environmental instability are discussed in the context of future low-power and neuromorphic computing.