DOI: 10.1039/d3nr02995f ISSN:
Tunable non-volatile memories based on 2D InSe/h-BN/GaSe heterostructures towards potential multifunctionality
Xiang Gong, Yueying Zhou, Jiangnan Xia, Li Zhang, Lijie Zhang, Long-Jing Yin, Yuanyuan Hu, Zhihui Qin, Yuan Tian- General Materials Science
The first high-performance, air-stable, and tunable non-volatile memory device utilizing a 2D InSe/h-BN/GaSe heterostructure with well-preserved interfaces has been demonstrated towards promising versatility.