Transverse galvanomagnetic effect in phonon generation regime in bismuth

Transverse galvanomagnetic (Ettingshausen) effect has been measured in monocrystalline samples of bismuth. It is found that a transition to nonlinear conductivity regime is accompanied by an increase in the transverse temperature gradient in the sample. Consequently, it has been possible to observe directly the flow of nonequilibrium phonons generated in the Esaki effect regime. The sound generation coefficient, defining the part of the power liberated from the electron system to the nonequilibrium phonon system, has been obtained experimentally. The temperature dependence of nonlinear current–voltage characteristics has been measured and analyzed.