The inverse proximity effect between topological insulator Bi2Te3 and superconductor NbTiN
Haodong Wu, Renjie Xie, Shenjin Zhang, Shaoqin Peng, Jiachang Bi, Min Ge, Merlin Hall, Asghar Kayani, Gaurab Rimal, Fengwen Kang, Fengfeng Zhang, Yanwei Cao, Xiong YaoInducing a superconducting gap in topological materials via the proximity effect has been a widely applied approach to exploring topological superconductivity. However, the inverse proximity effect, which can provide crucial insights for understanding topological insulator-superconductor (TI-SC) Josephson junctions, remains largely unexplored thus far. In this study, we report the successful epitaxy of a TI-SC heterostructure using NbTiN as the superconductor layer and investigate the inverse proximity effect in it. Electrical transport measurements reveal a systematic suppression of the superconducting transition temperature with increasing Bi2Te3 thickness, reaching ∼23% in the 10 nm NbTiN samples and tending toward saturation at larger Bi2Te3 thickness. This behavior resembles the inverse proximity effect in conventional superconductor-normal metal bilayers. The perpendicular upper critical field yields a coherence length with only weak thickness dependence. Angle-resolved photoemission spectroscopy resolves the Bi2Te3 Dirac surface state and shows no detectable thickness-dependent shift of the Dirac point. Our results establish a model system to investigate the inverse proximity effect in TI-SC heterostructures with sharp superconducting transitions at ultrathin thickness, offering important insights into a deep understanding of TI-SC Josephson junctions.