Temperature‐Dependent Metallization Optimization for Enhanced Efficiency in HJT Solar Cells
Maha Nur Aida, Hasnain Yousuf, Mengmeng Chu, Alamgeer, Rafi Ur Rahman, Junhan Bae, Shurouq Abdulqadir Mohammed, Muhammad Quddamah Khokhar, Junsin YiABSTRACT
This study examines the influence of drying temperature during metallization on the performance of heterojunction (HJT) solar cells, known for their high efficiency and excellent surface passivation. Drying temperature critically affects electrical conductivity and overall device reliability. Experiments were conducted with silver (Ag) metallization contacts at temperatures from 150°C to 190°C. Characterization techniques included current density–voltage (J–V) measurements, external quantum efficiency (EQE) analysis, series and shunt resistance evaluation, and optical microscopy of the metal‐semiconductor interface. Results revealed that 170°C yielded optimal performance, achieving 21.80% efficiency, the lowest series resistance (14.48 Ω cm 2 ), the highest fill factor (76.42%), and improved EQE. These gains were attributed to enhanced interface quality and reduced recombination losses. Future work will explore alternative metallization materials, such as silver‐coated copper (Ag‐coated Cu) paste, aiming to further improve performance, reduce cost, and enhance the scalability of HJT solar cell manufacturing for industrial applications.