DOI: 10.1039/d6ta05056e ISSN: 2050-7488
Synergistic engineering of oxygen vacancies and defect levels in n-type semiconductor SnO 2 for plasma-enhanced CO 2 conversion
Sai Li, Zekai Ma, Yuhang Wang, Zeyu Zhou, Dongyuan Yang, Haixia Wu, Shuoshuo Wang, Yameng Ma, Qi Chen, Jiahao ZhouHuang, Qiuliang Yu, Kui Zhang, Haiyan Zhu, Shaobo Jia, Ke Du, Peng Ren, Qing Feng, Lihui Zeng, Rui Tan, Zhiming FengDBD plasma induces oxygen vacancies and bandgap narrowing in SnO 2 , enhancing interfacial charge transfer and promoting efficient CO 2 conversion to CO.