DOI: 10.1063/5.0350846 ISSN: 0003-6951
Suppression of n-type inversion in high-dose Mg-implanted GaN layers via cap annealing under ultra-high-pressure
Meguru Endo, Kenta Watanabe, Yoshitaka Nagasato, Hiroki MiyakeWe report a new technique of cap annealing under ultrahigh pressure for the effective activation of implanted GaN layers. Ultrahigh-pressure annealing with an AlN capping layer successfully suppressed surface roughening and n-type inversion of the p-GaN layer fabricated by Mg/N implantation, achieving p-type activation of Mg-implanted GaN with a “high” dose (>1 × 1015 cm−2). The p-type activation in the region implanted with a high Mg dose was confirmed by C–V measurements as well as cross-sectional scanning capacitance microscope. Our p-type activation technique using an AlN cap is promising for effectively activating Mg-implanted p-GaN annealed at ultrahigh pressure.