Superconductivity in Gallium‐Doped Germanium‐on‐Insulator Through Ion Implantation and Flash‐Lamp Annealing

The fabrication of group‐IV superconducting semiconductors has received considerable attention owing to their potential for integration with hybrid semiconductor–superconductor circuits. In this context, superconducting germanium‐on‐insulator (GeOI) is particularly promising, as it can fully exploit the advantages of the GeOI technologies for advanced electronic devices. In this study, we demonstrate superconductivity in GeOI via Ga ion implantation and millisecond‐range flash‐lamp annealing (FLA). Electrical measurements showed an activated hole concentration of approximately 8 × 10 ²⁰  cm ⁻³ , with a superconducting transition temperature of around 150 mK. Additionally, the critical magnetic field aligns well with the behavior expected for diluted superconducting semiconductors. The superconducting GeOI provides a foundational platform for potential applications in future quantum devices.