DOI: 10.1116/6.0002798 ISSN:

Study on effective dry etching of InGaZnO thin films under capacitively coupled plasma-reactive ion etching with a nonfluorine-based etching gas

Changyong Oh, Hyeong Wook Kim, Myeong Woo Ju, Jun Ho Song, Bo Sung Kim
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Condensed Matter Physics

Dry etching of InGaZnO (IGZO) thin films was performed in a capacitively coupled plasma-reactive ion etching (CCP-RIE) mode using hydrochloride (HCl) and argon (Ar) gases. Dry-etching characteristics and surface properties of IGZO films were then investigated according to gas mixture ratio, radio frequency power, and chamber working pressure. With an optimized ratio of HCl : Ar at 20  : 20 SCCM, the IGZO film showed good etch characteristics with a moderate etch rate of 6.0 nm/min and a low roughness of 0.19 nm. During the etching process of IGZO thin films, nonvolatile by-products such as GaClx, InClx, and ZnClx generated on the surface could be effectively removed by physical bombardment with Ar+ ions. As a result, we successfully conducted dry etching of IGZO thin films in the CCP-RIE system under HCl-Ar gas conditions, which demonstrated dry etching on IGZO without needing a fluorine-based etching gas.

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