Spin-Resolved Topology of Mem-Emitter Response

Abstract

We develop a general framework for spin-resolved mem-emitters and illustrate it unequivocally using a monolayer MoSe2/clinochlore optoelectronic device. In mem-emitters, both the intensity and energy of light emission encode the history of external driving through slowly evolving internal state variables. When spin is included as an active degree of freedom, voltage-controlled memory dynamics give rise to spin-resolved hysteresis revealed through the degree of circular polarization under magnetic fields. Using polarization-resolved magneto-photoluminescence, we observe pronounced hysteresis in excitonic and trionic emission, whose loop topology depends on magnetic field and circular polarization. A minimal spin-resolved model shows that these features are generically governed by a polarity-dependent tuning of the effective Landé g-factor, with its voltage slope uniquely determining the orientation of the degree-of-circular-polarization loops. First-principles calculations suggest that interface-induced symmetry breaking provides a microscopic route to such bias-dependent spin responses, highlighting the broad relevance of spin-resolved memory effects in optoelectronic emitters.