Spectrally Distant InGaN‐Based Microdisk Lasing Transferred on Si
Jin Lin, Xiaoping Zhou, Rui Ren, Xingfei Zhang, Binru Zhou, Wurui Song, Xiaolong Liu, Zhicong Li, Yanan Guo, Yan Yan, Yiyun Zhang, Jianchang Yan, Xiaoyan Yi, Junxi Wang, Jinmin LiABSTRACT
III‐Nitride semiconductors microdisk lasers hold great promise to be used as the coherent information light sources for photonic integrated circuits in the visible‐to‐ultraviolet wavelength bands, with a compact size, narrow linewidths as well as lateral directional emission characteristics. Information processing speed requires a wide coverage of wavelengths for extending the bandwidths for the on‐chip lasers. This paper reports distant spectral lasing with a ∼22 nm mode‐spacing from a single microdisk cavity containing InGaN quantum wells as transferred on Si (100). The lasing thresholds are approximately 1.01 mJ/cm 2 for the green peak (506.9 nm) and 1.26 mJ/cm 2 for blue peak (484.6 nm), with the Q factors of ∼845 and ∼1425, respectively. This wide separation in the spectral lasing peaks is achieved by the carrier valence band‐filling effects upon optical pumping densities or In localization in active region. The carrier band‐filling effects on the lasing characteristics are also studied and analyzed. This work may give an insight in the carrier dynamics to understand the dual‐state lasing in III‐Nitride microdisk cavities.