DOI: 10.1039/d3ma00205e ISSN:
Solution-based in situ deposition of Sb2S3 from a single source precursor for resistive random-access memory devices
Sayali Shrishail Harke, Tongjun Zhang, Ruomeng Huang, Chitra Gurnani- General Materials Science
- Chemistry (miscellaneous)
A one-step, scalable, reproducible, low-temperature, and in situ solvothermal deposition method has been established for the growth of Sb2S3 on FTO using [Sb{S2P{O(Pr)2}3] precursor. The Ag/Sb2S3/FTO device demonstrated low operating voltage and excellent resistive switching characteristics.