SiO2-Regulated Ag/[MMIm][H2PO4]:H2O/Ag Memristor for Neuromorphic Synaptic Simulation and Wearable Intelligent Application

Abstract

Targeting the bottlenecks of solid-state memristors, including resistance drift, poor endurance, and high-power consumption, an Ag/[MMIm][H2PO4]:H2O/Ag microfluidic ionic liquid memristor was designed and fabricated. SiO2 nanoparticles were introduced as a stabilizer to optimize the device stability. SiO2 modulates ion migration and silver electrode deposition through interfacial hydrogen bonding and steric hindrance effects, enabling stable operation over 240 cycles with a uniform distribution of high and low resistance states. The device accurately emulates neuromorphic functions, including habituation and pulse width-, interval-, and amplitude-dependent synaptic plasticity. Moreover, the device exhibits excellent mechanical flexibility and stable resistance state under bending radii of 2–20 mm, making it suitable for wearable electronics. Leveraging its triple-exponential decay forgetting characteristic, a dynamic physical password generation scheme for disposable room key cards is constructed, achieving highly secure offline one-time password generation. This ionic liquid memristor provides a promising solution for neuromorphic computing, flexible wearable electronics, and intelligent security authentication.