Self-powered solar-blind ultraviolet detection and integrated electroluminescence performance of Ga2O3:Er-based devices

Gallium oxide (Ga2O3) exhibits broad application prospects in solar-blind ultraviolet detection and rare-earth-activated electroluminescence (EL). However, the high-density intrinsic defects within Ga2O3 severely limit the development of high-performance photodetectors. Moreover, studies on dual-function devices integrating photodetection with EL remain scarce. Herein, we synthesized surface-wrinkled Er-doped Ga2O3 (Ga2O3:Er) films via thermal decomposition of organic precursors. This undulating morphology enhances the ultraviolet light absorption of films. Additionally, Er doping suppresses oxygen vacancies and modulates the heterojunction band alignment. The constructed self-powered photodetector exhibits a responsivity of ∼3.75 × 103 mA/W, a specific detectivity of ∼1.86 × 1013 Jones, and a response time of ∼30 μs under 254 nm illumination. Moreover, the device exhibits characteristic Er-related EL driven by trap-assisted tunneling mechanisms under high reverse bias. The integrated device has been demonstrated for applications in optical-electrical-optical signal conversion and multi-modal signal response.