Scalable all-oxide anti-ambipolar switch for low-power ternary logic circuits

Anti-ambipolar switches (AAS) are specialized field-effect devices tailored for ternary logic operations, presenting a viable solution to surpass the scaling constraints of traditional binary architectures. Here, we report a high-performance all-oxide AAS based on an indium-tin-zinc oxide/tin monoxide (SnO) heterojunction fabricated exclusively via CMOS-compatible processes. By systematically modulating the annealing conditions, we effectively engineer the defect states and carrier transport dynamics within the SnO channel to achieve exceptional switching characteristics. Consequently, the device exhibits a high peak-to-valley ratio (>102) over a narrow operational voltage range (0–8 V) and demonstrates excellent bias stability. To validate its practical utility, we construct a ternary logic inverter featuring well-defined intermediate logic states and a low power consumption of 3.29 μW. Ultimately, this research delineates a scalable and practical methodology for developing energy-efficient, multi-valued integrated circuits utilizing standard oxide semiconductor platforms.