DOI: 10.1039/d6tc02049f ISSN: 2050-7526
Room-temperature ferromagnetism of a triphenyl-amine graphdiyne semiconductor doped with a transition metal
Lingshuo Meng, Yumeng Zhou, Shengkai Xia, Liang Zhang, Ning Wang, Mingjia ZhangFe and Co doping induce ferromagnetism with T c > 300 K in triphenyl-amine graphdiyne while retaining its semiconducting properties. Devices assembled from such materials show a broadband and fast photoresponse.