Role of spatial impurity spread on the transition dynamics of doped GaAs quantum dot in presence of noiseSwarnab Datta, Bhaskar Bhakti, Manas Ghosh
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Present enquiry thoroughly explores the time‐average population transfer rate (TAPTR) of impurity doped GaAs quantum dot (QD) pursuing the change in the spatial impurity spread (SIS). The said excitation rate has been studied under the supervision of Gaussian white noise (GWN). The promotion of the ground state electronic density takes place due to different types of time‐changing fluctuations viz. simple sinusoidal field, time‐dependent confinement potential and time‐dependent magnetic field. GWN couples with the QD by additive and multiplicative modes. The work examines the joint influence of SIS, GWN and its pathway of inclusion and the nature of the time‐dependent perturbations on the attributes of the TAPTR. The TAPTR curves are composed of steadfast rise, steadfast diminish, maximization (relevant to generation of large nonlinear optical properties), minimization and saturation (suggesting dynamic freezing). The findings elucidate the means of fine‐tuning the TAPTR among the doped GaAs QD eigenstates in presence of noise, when the SIS undergoes a gradual change.
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