Review on Oxygen Concentration in Czochralski Grown Silicon Crystals for Photovoltaic and Semiconductor Devices

ABSTRACT

Czochralski (Cz) crystal growth remains the dominant technique for producing Monocrystalline Silicon (Mono‐Si) for photovoltaic and semiconductor applications. However, the performance and yield of Cz‐grown silicon ingots are strongly influenced by oxygen incorporation during crystal growth. This review critically examines both modeling and experimental studies addressing oxygen impurity behaviors in Cz‐grown Mono‐Si, with particular emphasis on achieving lower oxygen concentration and improved spatial uniformity within the crystal and melt. The influence of key growth parameters including pulling rate, crystal and crucible rotation, melt convection, argon flow rate and pressure, crystal diameter and length, heater configuration, and applied magnetic fields—on oxygen incorporation and transport is systematically discussed. Advances in global and Multiphysics simulations used to predict oxygen transport, chemical reactions, and deposition during crystal growth are also reviewed. Furthermore, optimized rotation conditions and crucible geometries aimed at improving crystal quality are summarized. Experimental characterization techniques such as Fourier‐transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), photoluminescence (PL), and related methods are reviewed to correlate oxygen‐related defects with growth conditions. This review provides a comprehensive overview of oxygen‐induced defects and mitigation strategies in Cz‐grown silicon, offering insights for the development of device‐quality silicon ingots for photovoltaic and semiconductor technologies.