Remote plasma assisted processing and semiconductor interface electronic structure

The development of remote plasma-assisted treatment of semiconductors has helped to drive microelectronics into the nanoscale regime. Dr. Gerry Lucovsky’s pivotal role in this development has made an impact not only in the realization of ultralow defect densities in SiO2/Si transistor junctions but also in the understanding and control of a wide range of semiconductor interfaces. Here, we show how this technique has expanded our understanding of electronic interfaces beyond the Si interface to many different compound semiconductors.