Reconfigurable Ternary Logic‐In‐Memory With Organic Antiambipolar Transistor

ABSTRACT

We developed a reconfigurable ternary logic‐in‐memory (LIM) device based on an organic antiambipolar transistor and incorporating a gold floating gate into a hafnium oxide (HfO ₂ ) gate insulator. First, a standard ternary inverter was obtained with extremely low input and drain voltages (2 V) owing to the high dielectric constant of the HfO ₂ gate insulator. Three distinct output logic states (“2,” “1,” and “0”) were clearly obtained for the corresponding input logic states (“0,” “1,” and “2”). Then, the voltage transfer curve was laterally shifted up to 1.8 V by controlling the hole‐ and electron‐injection processes into the floating gate, obtaining a ternary nonvolatile memory. This memory function realized versatile reconfigurable ternary inverter operations. Three ternary inverters, namely, standard, negative, and positive ternary inverters, were demonstrated in a single LIM device. Remarkably, these inverter operations were performed using the same input voltages and then electrically reconfigured by adjusting the charge condition (i.e., holes or electrons) of the floating gate. Our development seems promising for performing multivalued in‐memory computing toward surpassing the capabilities of existing von Neumann systems.