Recent advances in ferroelectric-based negative capacitances for electronic devices

Negative capacitance field-effect transistors offer a promising route to overcome the subthreshold swing limit of 60 mV/dec at 300 K in conventional complementary metal–oxide–semiconductor technology, potentially reducing power consumption without sacrificing performance. This review provides a comprehensive analysis of the negative capacitance (NC) effect in ferroelectric materials and its impact on next-generation electronic devices. We first outline the history and key properties of ferroelectric materials and their role in modern technology, with emphasis on the NC concept, major theoretical frameworks for NC, and state-of-the-art measurement techniques. We then summarize NC behavior across representative material systems, including perovskite, fluorite, and wurtzite ferroelectrics, and discuss key factors that influence NC and its device applications. Overall, this article provides an up-to-date overview of ferroelectric-based NC and its potential for low-power, high-performance electronics.