Recent Advances and Critical Review on Two-Dimensional Black Phosphorus: Preparation and Optoelectronic Applications

Two-dimensional black phosphorus (2D BP) has emerged as one of the most promising two-dimensional semiconductors for next-generation micro and nanoelectronics beyond Moore’s Law. It is distinguished by its unique combination of a layer dependent direct bandgap, broadband photoresponse, and pronounced in-plane anisotropy, addressing key intrinsic limitations that have hindered the widespread application of graphene and conventional transition metal dichalcogenides (TMDCs). This review provides a systematic and comprehensive overview of recent advances in the controllable fabrication of 2D BP and its applications in transistors and photodetectors. We first elucidate its crystal lattice structure and fundamental physical properties, then categorize and summarize synthesis strategies based on production scale ranging from small scale methods (e.g., mechanical exfoliation and solution based exfoliation) to large scale methods (e.g., Chemical Vapor Deposition (CVD) and Pulsed Laser Deposition (PLD)), with a particular focus on recent advances in high-speed field-effect transistors and broadband photodetectors. In summary, the key to achieving large-scale controllable synthesis lies in addressing the challenges of high-temperature oxidation of black phosphorus and the uncontrollable diffusion of phosphorus sources. In the future, industrial applications are expected to be realized through CVD based regulation of phosphorus sources, low-temperature growth by PLD, and deep integration with silicon-based processes.