RAM Embedded Die Packaging (EDP) Experts in Heterogeneous Advanced Packaging (AP)

The rapid adoption of wide bandgap (WBG) semiconductors such as Gallium Nitride (GaN) and Silicon Carbide (SiC) is reshaping the landscape of power electronics, offering significant improvements in switching speed, power density, and efficiency. However, the full benefits of these advanced devices cannot be realised without corresponding innovation in packaging technologies. Conventional discrete and module packaging methods, often reliant on wire bonding and high-inductance interconnects, are increasingly a bottleneck. Achieving the performance potential of WBG devices requires new approaches to embedding, interconnection, and thermal management at scale.

RAM Innovations has developed a panel-level embedded die packaging platform designed specifically to address these challenges. Unlike conventional module assembly that builds housings one device at a time, RAM’s technology embeds bare die directly into large PCB-like panels, enabling high-volume parallel manufacture of power modules with dramatically reduced parasitic inductance, enhanced thermal performance, and lower cost per unit. The approach opens a pathway toward compact, efficient, and reliable power conversion solutions across automotive, aerospace, and industrial markets.

This paper provides an update on the progress of RAM’s packaging technology, focusing on performance data from two GaN-based half-bridge demonstrators and outlining additional developments in the pipeline.

First, a 100 V GaN half-bridge module has been fabricated and characterised. This design targets lower-voltage applications such as DC-DC converters and on-board chargers where efficiency and power density are critical. Results demonstrate that the embedded approach reduces loop inductance by more than 50% compared to conventional packaging, enabling faster switching with lower overshoot and ringing. Thermal measurements confirm that embedding directly into copper-clad laminates improves heat spreading, reducing junction-to-case thermal resistance.

Second, a 650 V GaN half-bridge module has been developed for higher-voltage traction inverter and industrial drive applications. Test data show significant reductions in switching losses and EMI, validating the benefits of low-parasitic panel-level interconnects. These modules achieve competitive power density while maintaining manufacturability at panel scale, illustrating the potential for cost-effective production at automotive volumes.

In addition to these demonstrators, the paper will provide a forward look at RAM’s pipeline of packaging developments, including SiC-based modules for medium- and high-voltage applications. The role of process optimisation, equipment capability, and supply chain integration will also be discussed.

The findings highlight how embedding technology can bridge the gap between device potential and system performance, delivering modules that are smaller, lighter, and more efficient while offering a scalable manufacturing route. By aligning advanced materials, panel-level processes, and novel interconnects, RAM Innovations demonstrates a packaging platform capable of supporting the next generation of power electronic systems.

This presentation will be of interest to semiconductor device makers, power module manufacturers, equipment suppliers, and system integrators seeking to understand how packaging innovation can unlock the full benefits of WBG semiconductors in real applications.