DOI: 10.1039/d6ra00943c ISSN: 2046-2069
Quantum transport insights into layer-dependent behavior of Sub-1 nm MoS 2 transistors for advanced scaling
Mughira Ghafoor, Salah Ud Din, Sufaid Shah, Matin Ashurov, Muhammad Sajid, Rajwali Khan, Jing LuSub-1 nm gate-length MoS 2 field-effect transistors (FETs) have recently been demonstrated experimentally; however, their fundamental performance limits remain unclear.