PVPh/PMMA-ZrO2 Hybrid Gate Dielectric for Flexible CdS TFTs

The development of flexible thin-film transistors (TFTs) is crucial for the advancement of wearable electronics, bendable displays, and the Internet of Things (IoT). A key challenge in this field is the fabrication of high-performance gate dielectric layers that combine excellent electrical properties with mechanical robustness and low-temperature processability. In this work, we report flexible TFTs based on CdS and hybrid PVPh/PMMA-ZrO2 as semiconductor and gate dielectric layers, respectively. The hybrid gate dielectric films were deposited on flexible PEN substrates via a facile spin-coating process at a low temperature of 150 °C. On the other hand, CdS layers were deposited through photo-assisted chemical bath deposition at room temperature. Both correspond to deposition methods in solutions, fulfilling the low-temperature condition. The electrical properties of the hybrid gate dielectric layers were characterized by using metal–insulator–metal (MIM) capacitors, which presented excellent insulating properties, low leakage current density and suitable gate capacitance for transistor operation. From the analysis of the electrical response of flexible TFTs, reliable device characteristics and key electrical metrics were extracted. Furthermore, the MIM and TFTs were tested under mechanical bending, demonstrating stable performance. The MIM capacitors showed outstanding mechanical stability, retaining low leakage and stable capacitance after 1000 bending cycles, with changes attributed to reversible interfacial charge redistribution rather than bulk degradation. Meanwhile the TFTs kept full electrical functionality under repeated bending and tight bending radii (down to 0.6 cm), demonstrating reasonable mechanical durability. These results validate the solution-processed PVPh/PMMA-ZrO2/CdS system as a promising, mechanically robust platform for flexible electronics.