DOI: 10.1021/acsaelm.6c01256 ISSN: 2637-6113

Photoexcitation Study on 2DEG at Double-Doped Oxide Heterointerfaces

Hang Yin, Jiaxin Lv, Kexin Jin, Shuanhu Wang

Abstract

Ever since the discovery of two-dimensional electron gas (2DEG) at transition metal oxide interface, it has been proven to be a hot research spot with extremely high theoretical and practical potential because of the rich physical phenomena and broad quantum coherence that respond to multiple external stimuli. Here, by illuminating 360 nm light (2 and 5 mW) at carefully designed Nd0.86Sr0.14Al0.86Co0.14O3/SrTiO3 (NSACO/STO) and Nd0.86Sr0.14Al0.86Fe0.14O3/SrTiO3 (NSAFO/STO) heterointerfaces, a series of phenomena, like band splitting, enhanced magnetoresistance (MR), and Rashba spin–orbit coupling (SOC), emerge and can be systematically adjusted by the light power and doping element. The study advances the understanding of optoelectronic behaviors in complex oxide heterointerfaces, as well as the insights for developing tunable quantum devices.

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