DOI: 10.3390/c12040072 ISSN: 2311-5629

Parameter-Controlled PECVD Growth of Carbon Nanotubes

Evgeny P. Kitsyuk, Yulia O. Vasilevskaya, Artemiy A. Shamanaev, Roman M. Ryazanov, Polina A. Edelbekova, Lidiya S. Volkova, Pavel N. Vasilevsky, Vyacheslav V. Svetukhin

This study focuses on the impact of plasma-enhanced chemical vapor deposition (PECVD) synthesis parameters on the characteristics of a synthesized vertical array of multi-walled carbon nanotubes (VMWCNT). Catalytic synthesis is carried out on a thin nickel film on a silicon substrate after breakup of the Ni film into nanoparticles during pretreatments–oxidation and reduction. The influence of growth temperature, synthesis duration, plasma parameters, working pressure, and precursor concentration on the morphology and geometry of VMWCNT is investigated. A detailed combination of scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) is used to analyze the evolution of geometry, defect density, and nitrogen doping of carbon nanotubes (CNT) with varying synthesis temperatures. The work includes recommendations for adapting PECVD synthesis to achieve predictable and reproducible growth of VMWCNT with optimal properties for specific technological applications.