DOI: 10.1039/d3mh02113k ISSN: 2051-6347
Oxygen tracer diffusion in amorphous hafnia films for resistive memory
Dongjae Shin, Anton V. Ievlev, Karsten Beckmann, Jingxian Li, Pengyu Ren, Nathaniel Cady, Yiyang Li- Electrical and Electronic Engineering
- Process Chemistry and Technology
- Mechanics of Materials
- General Materials Science
We quantified the oxygen tracer diffusion in amorphous hafnium oxide thin films. These tracer diffusion values are consistent with the experimentally measured retention times of hafnium oxide resistive memory devices.