Optoelectronic Resistive Switching Memory Enabled by a Zero‐dimensional Manganese(II) Hybrid Complex
Thi Phuong Anh Bach, Duc Anh Nguyen, Deblina Das, Youngsin Park, Atanu Jana, Sangeun ChoABSTRACT
Lead‐free organic–inorganic hybrid metal halide compounds are emerging as promising alternatives to conventional lead‐based materials for optoelectronic applications. However, their implementation in non‐volatile memory devices remains largely unexplored. Herein, we report a luminescent resistive random‐access memory (RRAM) device based on a zero‐dimensional (0D) manganese(II) hybrid complex, (PTP) 2 MnBr 4 (PTP = 2‐propenyltriphenylphosphonium), synthesized via a mechanochemical route and integrated into solution‐processed thin‐film devices. The Ag/PMMA/(PTP) 2 MnBr 4 /ITO memory device exhibits stable bipolar resistive switching (RS) with a high ON/OFF ratio exceeding 10 6 , reliable endurance over 350 switching cycles, and data retention longer than 4 10 3 s. Electrical transport analysis reveals that the RS behaviour originates from the formation and rupture of cooperative conductive filaments consisting of bromide‐vacancy pathways and Ag‐related metallic conduction channels, exhibiting space‐charge‐limited conduction in the high‐resistance state and Ohmic conduction in the low‐resistance state. Furthermore, ultraviolet illumination significantly reduces both SET and RESET voltages by promoting photoinduced carrier generation and ion migration within the Mn(II) hybrid layer, enabling light‐assisted switching at reduced electrical bias. The memory functionality is also maintained on a flexible substrate under mechanical bending, demonstrating excellent mechanical robustness. These results highlight 0D Mn(II) hybrid complexes as promising lead‐free materials for multifunctional, light‐responsive, and flexible photonic devices.