Optimizing the properties of In–N dual-doped SnO₂ films: incorporation of nitrogen into the SnO₂ lattice at the optimal content via direct current sputtering

Direct current magnetron sputtering was employed to fabricate In–N dual-doped SnO₂ films, with varying concentrations of N₂ in a mixed sputtering gas of N₂ and argon (Ar).