On‐Chip Multifunction Optoelectronic Logic Gates Based on a Single Bipolar Photoresponse 1T‐VSe ₂ Heterostructure

ABSTRACT

Optoelectronic logic gates (OELG) are highly desired for next‐generation logic circuits and promising for developing all‐optical networks and all‐optical computing, owing to their high computational speed, low power consumption, and large capacity. However, achieving multi‐functional OELG within a single device remains a challenge, including complex structure, limited functions, high energy consumption, and low reliability. Here, we demonstrated eight reconfigurable OELGs (AND, OR, NOT, IMP, NAND, NOR, XOR, and XNOR) based on a single VSe ₂ /MoS ₂ heterostructure device with bipolar photoresponse. The ultrabroadband negative photoconductivity (NPC) effect was demonstrated based on a VSe ₂ phototransistor with a high negative photoresponsivity ( R ) of 46.56 AW ⁻¹ . In contrast, the VSe ₂ /MoS ₂ heterostructure exhibits ultrabroadband positive photoconductivity (PPC) effects and realizes a high positive R of 20.66 AW ⁻¹ , a high light on/off ratio of ∼10 ⁸ , and fast speed. Moreover, the advanced functionalities, such as encrypted optical communication, edge extraction, and image fusion, were promisingly realized on a single device. This work opens a way for the development of on‐chip optoelectronic logic computing circuits and image processing.