Novel precursor for the preparation of vanadium sulfide layers with atomic layer deposition

The present paper reports on the atomic layer deposition of vanadium sulfide (VS) layers from tetrakis(ethylmethylamino)vanadium and H2S. The deposition of VS layers with these precursors has proven possible between 200 and 300 °C. The prepared layers were amorphous, but a postdeposition annealing in H2S atmosphere yielded crystalline VS layers. The use of this precursor combination has so far not been reported.