Nonvolatile reversible ferroelectric controlled half-metallicity of 2D room-temperature ferromagnetic heterostructures CrSF/Sc2CO2

Nonvolatile electrical manipulation of two-dimensional van der Waals (vdW) magnets represents an important emerging research direction for spintronic devices. In this work, we utilize first-principles computations to thoroughly characterize the intrinsic magnetoelectric properties of the vertical CrSF/Sc2CO2 heterostructures assembled from ferromagnetic CrSF and ferroelectric Sc2CO2 semiconductors. We demonstrate that the transition between half-metallic and semiconducting states can be effectively modulated by changing the ferroelectric polarization of the Sc2CO2 layer, driven mainly by interlayer charge transfer. This transition implies a substantial change in the electronic transport behavior, as the half-metallic state provides a metallic conduction channel while the semiconducting state retains a finite bandgap. Remarkably, the CrSF/Sc2CO2 vdW heterostructure retains far surpass room temperature ferromagnetism under both ferroelectric polarization configurations. The present study establishes a feasible modulation strategy to realize nonvolatile electrical regulation for developing next-generation low-power spintronic memory devices.