Near‐Infrared Light‐Sensitive Photoneuromorphic Organic Field‐Effect Transistors With Quantum Dot‐Functionalized Dielectric Layer

ABSTRACT

Detecting near‐infrared (NIR) light in neuromorphic devices enables advanced sensory processing and expands functionality for bio‐inspired vision systems. However, Conventional organic neuromorphic devices exhibit limitations in charge trapping and exciton dissociation under NIR illumination, limiting synaptic performance. To address these limitations, photoneuromorphic organic field‐effect transistor (pOFET) incorporating a PVDF‐HFP/quantum dot (QD)‐based dielectric layer is developed. PVDF‐HFP of ferroelectric dielectric enhances charge retention and exciton dissociation, while CdSe/CdS QDs improve light absorption and charge transfer efficiency. The pOFET demonstrates outstanding photoresponsivity of 191.45 A W ⁻¹ and external quantum efficiency of 2.74 × 10 ⁴ % under NIR illumination, with detectivity reaching 2.50 × 10 ¹³ Jones. Compared to pristine TIPS‐pentacene devices, pOFETs show an increased excitatory post‐synaptic current baseline of 15.50 times enhancements under NIR illumination. Long‐term memory characteristics of 47.19% with PVDF‐HFP incorporation are achieved compared to 8.11% without PVDF‐HFP. The pOFETs successfully demonstrate neuromorphic computing capabilities including Pavlovian associative learning and reservoir computing across wavelengths. This advancement highlights the critical role of PVDF‐HFP in extending the photocurrent response and enhancing synaptic performance. The QDs and PVDF‐HFP optimize light absorption and exciton dissociation, enabling efficient optical synapses with neuromorphic computing potential for adaptive color recognition and classification in artificial vision applications.