N‐Doped Graphene Quantum Dots/Bi 2 MoO 6 Composites for Selective Photocatalytic NO Oxidation
Ning Liu, Shuilin Liu, Weijie Zhu, Yuehong Song, Yongfei Li, Lei Wang, Zhimin WuABSTRACT
Fine‐tuning interfacial charge transfer pathways to achieve efficient and selective NO removal remains a key challenge for visible‐light‐driven photocatalysts in gas‐phase reactions. Herein, N‐doped graphene quantum dots/Bi 2 MoO 6 (N‐GQDs/Bi 2 MoO 6 ) composite photocatalysts were constructed to regulate the interfacial electronic structure and steer carrier migration for NO oxidation under visible‐light irradiation. Photocatalytic evaluations demonstrate that the introduction of N‐GQDs markedly enhances NO conversion efficiency and suppresses NO 2 formation compared with pristine Bi 2 MoO 6 . Structural, optical, and electrochemical analyses indicate that strong interfacial coupling between N‐GQDs and Bi 2 MoO 6 induces interface‐driven electronic reconstruction, which improves visible‐light absorption, promotes efficient separation and transport of photogenerated carriers, and accelerates the generation of reactive radicals required for NO oxidation. Consequently, the optimized composite exhibits significantly improved activity and selectivity for NO removal, along with good photostability. This work highlights the importance of engineering interfacial electronic structures in N‐GQDs/Bi 2 MoO 6 systems as a strategy for rationally designing high‐performance photocatalysts toward selective NO abatement.