Multifunctional Device Design and Applications of GaN and Transition Metal Dichalcogenides Heterojunctions

Abstract

This review comprehensively explores the cutting-edge applications of gallium nitride (GaN) and two-dimensional transition metal dichalcogenides (TMDs) heterojunctions in next-generation high-performance devices. With a strong focus on practical implementation, we systematically analyze the pivotal roles of GaN/TMDs heterostructures across electronics, optoelectronics, sensing, and energy conversion. Key advancements in high-frequency transistors, low-power neuromorphic computing, broadband photodetectors (UV to NIR), self-powered sensors, and efficient photocatalytic systems are highlighted. The discussion extends to innovative fabrication techniques enabling large-area integration and flexible electronics. Furthermore, we showcase their application potential in strategic fields such as 5G communication, artificial intelligence, imaging systems, environmental monitoring, and clean energy technologies. By addressing critical challenges in interface engineering, material synthesis, and device integration, this review provides a valuable roadmap for developing high-performance, commercially viable semiconductor devices.