Monolithic Integrated Chip of PdSe 2 Photodetector and Lithium Niobate Modulator
Tingfei Yuan, Xinxing Sun, Qiaonan Dong, Saisai Sun, Lang Gao, Tianyou Zhou, Botao Fu, Jianping Yu, Jinming Chen, Zhe Wang, Ke Wang, Jintian Lin, Ya ChengABSTRACT
Modulators and photodetectors are fundamental components of photonic integrated circuits and have a wide range of applications in optical communications, computing, and sensing. However, significant structural differences pose major challenges to monolithic integration, thereby limiting the expansion of device functionality and the miniaturization of photonic systems. In this work, we have achieved monolithic integration of PdSe 2 photodetectors with lithium niobate modulators. This integrated chip exhibits a bandwidth exceeding 2 GHz, enabling 1 Gbit s −1 data transmission. Furthermore, the on‐chip PdSe 2 photodetector demonstrates broad spectral response (980–1630 nm) and achieves a responsivity exceeding 0.3 A W −1 at 1550 nm. By unifying the manufacturing processes of the two devices, this integrated chip holds significant potential for achieving low‐cost production. Our research can be widely applied in emerging fields such as quantum information processing and photonic neural networks.