DOI: 10.1021/acsami.6c08414 ISSN: 1944-8244

Molecular Edge-Layer Engineering Suppresses Nanoscale Dissipation at Graphitic Step Interfaces

Dunhua Hu, Chaoying Wang, Bing Xu, Huayong Yang, Zhe Chen

Abstract

Atomic step edges are dominant sources of nanoscale energy dissipation on graphitic surfaces, including well-defined model interfaces and graphitic defect regions in carbon-based sliding contacts. Here, we show that treatment with linear n-alcohols provides a chain-length-dependent route to suppress step-associated lateral response at graphitic interfaces. Atomic force microscopy measurements on alcohol-treated highly oriented pyrolytic graphite reveal that lateral responses remain localized near step edges, whereas the apparent step height remains nearly unchanged after treatment. In contrast, the integrated step-associated lateral-response index decreases systematically with increasing alkyl-chain length, demonstrating that the local molecular environment at the step can regulate dissipative coupling without measurably altering the underlying carbon morphology. Reactive molecular dynamics simulations using controlled edge-associated alcohol-layer models reproduce the decreasing trend and identify how molecular-layer compliance and orientation can attenuate step-localized resistance. Longer chains suppress both step-up and step-down resistive responses by increasing interfacial compliance, aligning more readily with the scan direction, and reducing scan-direction strain accumulation in the silica tip. Short-lived tip–molecule/step interactions occur during step traversal and contribute a secondary, phase-dependent force component, but the dominant chain-length effect arises from molecular-layer mechanics and geometric buffering of the tip–step contact. These results establish molecular edge-layer compliance and orientation as descriptors for reducing nanoscale dissipation at graphitic step interfaces, while the applicability to real carbon-based coatings depends on defect structure, molecular retention, wear, and tribochemical regime.

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