DOI: 10.1021/acs.langmuir.6c02820 ISSN: 0743-7463

Molecular Anisotropy and Angular Redistribution in Layering Adsorption of Nitrogen in Model Carbon Slit Pores

Qin Ren, Yang-Xin Yu

Abstract

Molecular orientation is commonly averaged out in adsorption models, yet anisotropic adsorbates near regular interfaces can exhibit orientation-dependent stabilization at low coverage. Here we examine how the explicit diatomic representation of nitrogen affects layering adsorption at 77.4 K in ideal slit-shaped carbon pores (1.01–7.24 nm). Three descriptions are compared: grand canonical Monte Carlo (GCMC) with a rigid diatomic nitrogen model (D-GCMC), GCMC with a single-site spherical Lennard–Jones (LJ) model (LJ-GCMC), and isotropic weighted density functional theory (WDFT) based on the same LJ fluid. Adsorption isotherms, density profiles, orientational statistics, and apparent angular free-energy profiles were analyzed. Relative to spherical LJ nitrogen, diatomic nitrogen shows a shift of the first-layer onset to lower relative pressure (RP), together with broader layer-growth intervals. In a 7.24 nm slit pore, the onset occurs at RP = 1.7 × 10–6 for D-GCMC and 3.7 × 10–5 for LJ-GCMC. These differences are associated with near-wall orientation-dependent energetic stabilization at low coverage and subsequent angular redistribution during layer densification. The wall-induced angular energy anisotropy is strongest in the first layer, with a maximum bias of about 2.5 kJ·mol–1 (∼3.9 kBT), and becomes negligible in higher layers. Although isotropic WDFT neglects explicit molecular orientation, it approaches the D-GCMC behavior beyond the first layer, where surface-induced orientational constraints are weak and orientational effects are effectively averaged. These results show that explicit molecular anisotropy can systematically affect adsorption onset and layer-growth width at regular interfaces, while isotropic descriptions remain appropriate when orientational signatures are averaged in multilayer or heterogeneous regimes.

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