Low‐Voltage Operation of IGZO Memtransistors Enabled by Coupling Enhancement Through 2T Drain‐Driven Operation for Neuromorphic Computing

Neuromorphic computing has emerged as a promising approach to overcome the limitations of the von Neumann architecture by enabling energy‐efficient data processing. Here, we demonstrate a two‐terminal (2T) flash‐type indium–gallium–zinc oxide memtransistor for voltage‐scalable and compact neuromorphic systems. By employing drain‐induced Fowler–Nordheim tunneling, the proposed device achieves an operating voltage below 10 V while maintaining a large memory window of 6 V and a high on/off ratio of 10 ⁹ . The reduced operating voltage is enabled by coupling enhancement through 2T drain‐driven operation. The device represents linear weight modulation and stable retention with only 0.31% change after 10 ⁴  s, and robust endurance over 10 000 cycles. As a system‐level validation of the 2T drain‐driven platform, a memtransistor array is fabricated and exhibits uniform device characteristics. Furthermore, spiking neural network simulations incorporating nonideal characteristics demonstrate that an intensity‐based input encoding improves classification accuracy with reduced time steps for both Fashion‐MNIST and CIFAR‐10 datasets.